NPN+Dioda 400/200V 7A 90W TO3

NPN+Dio. 700V 8A 34W 700nS ISW218

N-Kan. 100V 13A 75W 0,2R TO220AB

N-Kanal 800V 6A 83W 0,9R TO220

N-Kanal 800V 6,2A 30W 1,3R TO220F

N-FET+D 500V 9A 0,8E TO220F

BDV65BGN - PN-Darl 100V 10A 125W TO247-3

TC426COA 2 - 2 x Mosfet-Dr.inv. 18V 1,5A SO8

IGBT tranzistor 1200V 20A 100W TO247AC

PNP 200V 15A 150W MT-200

P-Kan. 55V 74A 3,8W 0,02R D2Pak

N-Kan. 55V 64A 63W 0,008R TO220FU

N-Ka.55V 110A 200W 0,008R TO247AC

N-Ka.200V 30A 214W 0,075R TO247AC

N-LogL.55V 104A 3,8W 0,008R D2Pak

N-LL 40V 160A 200W 0,004R TO220AB

40V,130A,140W,N-MOS,TO252 3.9mR, 33/25ns, 40nC, LogL Log Level, menja 100N03

Half-Brdg Dr. 600V DIP 8

N-Kan. 100V 42A 3,8W 0,036R D2Pak

N-Ka+Z-D 600V 14A 190W 0,42R TO220

100V,59A,200W,N-MOS,TO263 25mR, 20/16ns, 76nC Manufacturer INFINEON TECHNOLOGIES Type of transistor N-MOSFET Technology HEXFETr Polarisation unipolar Drain-source voltage 100V Drain current 59A Power dissipation 200W Case D2PAK Gate-source voltage 30V On-state resistance 25mR Mounting SMD Gate charge 76nC

N-LogicLev. 50V 26A 75W TO220AB

40V,200A,230W,N-MOS,TO220 3.1mR, 30ns, 75nC,LogL Logic level mosfet

P-Kanal 50V 8A 40W 0,3R TO220AB

N-Ka.40V 162A 200W 0,004R TO220AB