N-K.75V 209A 470W 0,0045R TO247AC

N-Kan.1000V 3,5A 125W 3R TO220AB

N-Ka+D 500V 48A 625W 0,105R TO3PN

2N3055G NPN 100V 15A 115W B:20-70 ST TO3 ON semi.

IGBT sa FRED 1350V 30A 175W TO247

IGBT brzi 600V 40A 150W TO247AD

IGBT 600V 50A 333W TO247-3 H3

IGBT sa FRED 600V 40A 116W TO247

IGBT sa FRED 1350V 60/30A 165W TO247

IGBT brzi 600V 50A 333W D2PAK

Opis: PNP-Darl, 120V, 30A, 200W, 4MHz Kućište: TO3

550V,23A,34W,N-MOS,TO220F 130mR, 80nd, 48nC Marking 5R140P

1200V,30A,217W,N-IGBT+d,TO247 Vcesat-2.05V,tdoff-260ns,75nC K15H1203-oznaka na tranzistoru, Manufacturer INFINEON TECHNOLOGIES, Transistor type IGBT, Polarisation bipolar, Collector-emitter voltage 1.2kV, Collector current 30A, Power 217W, Case PG-TO247-3, Gate - emitter voltage +20V, Mounting THT, Technology TRENCHSTOPt 3, Series H3

1350V,40A,288W,N-IGBT+d,TO247 1.65V, 235ns, 170nC H20PR3 marking code, koristi se za induktivne resoe, mikrotalasne pecnice, rezonantne konvertere...

650V,80A,270W,N-IGBT,TO247 Vcesat-1.66V,150ns G50EF5 oznaka na tranzistoru

600V,80A,306W,N-IGBT,TO247 Vcesat-1.95V,200ns G40H603 oznaka na IGBT tranzistoru

600V,24A,104W,N-IGBT+d,TO220 Vcesat1.65V,270ns,48nC menja SKP06N60, K06N60, 12N60C3D oznaka na tranzistoru, Manufacturer ON SEMICONDUCTOR (FAIRCHILD) Type of transistor IGBT Collector-emitter voltage 600V Collector current 12A Power 167W Case TO220 Gate-emitter voltage 20V Pulsed collector current 96A Mounting THT Gate charge 71nC

160V,7A,100W, N-MOS,TO3P 2SJ162 komplementarni par

600V,41A,250W,N-IGBT,TO247 oznaka na tranzistoru G30N60HS, zamena: SGW50N60HS

600V,80A,250W,N-IGBT+d,TO247

100V,100A,277W,N-MOS,TO247 89mR, 193/53ns, 60nC Manufacturer WAYON Type of transistor N-MOSFET Technology WMOS C2 Polarisation unipolar Drain-source voltage 600V Drain current 38A Power dissipation 277W Case TO263 Gate-source voltage 30V On-state resistance 99mR Mounting SMD

75V,209A,330W,N-MOS,TO247 3,6mR, 130ns, 409nC Manufacturer Infineon (IRF) Menja 2SK2690, Type of transistor N-MOSFET Polarisation unipolar Drain-source voltage 75V Drain current 209A Power 330W Case TO247AC Gate-source voltage 20V On-state resistance 4.5mR Gate charge 410nC Technology HEXFETR

500V,32A,460W,N-MOS,TO247 130mR, 48/28ns, 190nC SIHG70N60EF zamena

100V,60A,176W, N-MOS,TO263 14.8mR, 43/27ns, 49nC Manufacturer: IXYS Product Category: MOSFET Mounting Style: SMD/SMT Package/Case: D2PAK-3 (TO-263-3) Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 18 mOhms Qg - Gate Charge: 49 nC Pd - Power Dissipation: