N-CMOS FET 200V 12A 150W 0,625R

Opis: N-Ch 70V 10A 50W 0,1R Kućište: TO220

Opis: NPN, 450V, 15A, 175W Kućište: TO03

Opis: N-tip, 400V, 15A, 170W, 0.3Ω Kućište: TO218AA

500V,29A,310W,N-MOS,SOT227B

600V,20.2A,34W,N-MOS,TO220FP Rds-170mR, 45/15ns, 37nC

600V,80A,306W,N-IGBT+d,TO247 Vcesat1.95V,197/19ns,223nC K40H603 oznaka na IGBT tranzistoru

600V, 45A, 187W,N-IGBT+d,TO24 1.5V, 254/23ns, 167nC

600V,60A,187W,N-IGBT+d,TO247 Vcesat-1.95V, 207ns, 165nC K30H603 oznaka na tranzistoru

1200V,50A,190W,N-IGBT+d,TO247 K25T120 oznaka, Proizvodjac INFINEON, Type IGBT N Channel, Package TO247, Max.voltage 1200V, Maximum collector current 75A, Maximum power dissipation 190W, Td (on/off) 50ns/560ns, Collector-emitter saturation voltage 1.7V

1200V,50A,349W,N-IGBT+d,TO247 1.7V, 265ns, 120nC K25T1202 oznaka na tranzistoru, Manufacturer INFINEON TECHNOLOGIES Type of transistor IGBT Collector-emitter voltage 1.2kV Collector current 50A Power dissipation 349W Case TO247-3 Gate-emitter voltage 20V Pulsed collector current 100A Mounting THT Gate charge 120nC

650V,74A,255W,N-IGBT+d,TO220 Vcesat-1.6V, 160/19ns, 95nC koristi se za solarne konvertere, aparate za varenje, pretvarace napona, K40F655-oznaka na tranzistoru, menja RJP63K2

1200V,40A,330W,N-IGBT+d,TO247 Vcesat1.55V, 359ns,143nC zamena FGA25N120ANTD, H20R1202-oznaka na tranzistoru, koristi se kod indukcionih resoa

1200V,50A,190W,N-IGBT,TO247 Vcesat1.7V, 560ns, 155nC zamena IGW40T120, G25T120 oznaka na tranzistoru, Manufacturer INFINEON Type of transistor IGBT Collector-emitter voltage 1.2kV Collector current 25A Power dissipation 190W Case TO247-3 Gate-emitter voltage 20V Mounting THT

600V,70A,290W,N-IGBT,TO220 20N60A4 oznaka na tranzistoru, kuciste TO220 (HGTP)

330V,90A,223W,N-IGBT+d,TO247 Vcesat-1.6V, 100ns Samsung PDP, FGA90N33ATD kataloska oznaka

1200V,50A,312W,N-IGBT+d,TO247 Vces2V, 190ns, 200nC SKW25N120, 190ns brzina sa diodom izmedju E-C Fairchaild proizvodjac kod mikrotalasnih pecnica se koristi i kod indukcionih sporeta

160V,7A,100W,P-MOS,TO3P 2SK1058 kompl. par

600V,40A,160W,N-IGBT+d,TO247 65ns,Vcesat-2.1V, 97nC G40N60UFD oznaka na tranzistoru, G40N60, menja FGA40N60UFD

600V,80A,195W,N-IGBT+d,TO247 oznaka na tranzistoru G80N60UFD, SGH80N60UFD kataloska oznaka, zamena: FGH40N60SMD

100V,134A,280W,N-MOS,TO247 4.8mR, 55ns, 120nC Manufacturer Infineon (IRF) Type of transistor N-MOSFET Technology HEXFET Polarisation unipolar Drain-source voltage 100V Drain current 134A Power dissipation 280W Case TO247AC Gate-source voltage 20V On-state resistance 6mR Mounting THT Gate charge 120nC

150V,171A,517W,N-MOS,TO247 4.8mR, 47/27ns, 151nC Proizvodjac: INFINEON Type: NMOS Package: TO247, TO3P VDSS max: 150 V On resistance: 0.0059 R Maximum Drain current: 171 A Maximum power dissipation: 517 W Power groups: Ultra High Power > 300 W

600V,23A,100W,N-IGBT+d,TO220 91/40ns,Vcesat-1.95, 50nC G4BC30UD oznaka na tranzistoru

600V,55A,200W,N-IGBT,TO247 Vcesat-1.93V,120ns,270nC G4PC50W oznaka na njemu, zamena IGW40N60H3

600V,40A,215W,N-IGBT+d,TO220 Vcesat-2.05V,115ns, 68nC Telecom and servers SMPS IGBT, Manufacturer International Rectifier Type of transistor IGBT Collector-emitter voltage 600V Collector current 40A Power 215W Case TO220AB Mounting THT, menja GB15B60